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  1. Ram Type DDR3 DDR3 DDR3 Not Populated
  2. Maximum Clock Speed (MHz) 667 (JEDEC) 667 (JEDEC) 667 (JEDEC)
  3. Maximum Transfer Speed (MHz) DDR3-1333 DDR3-1333 DDR3-1333
  4. Maximum Bandwidth (MB/s) PC3-10600 PC3-10600 PC3-10600
  5. Memory Capacity (MB) 4096 2048 2048
  6. Jedec Manufacture Name Samsung Samsung
  7. Search Amazon.com Search! Search! Search!
  8. SPD Revision 1.0 1.0 1.0
  9. Registered No No No
  10. ECC No No No
  11. DIMM Slot # 1 2 3
  12. Manufactured Week 30 of Year 2010 Week 30 of Year 2010
  13. Module Part # M378B5673FH0-CH9 M378B5673FH0-CH9
  14. Module Revision 0x0 0x0 0x0
  15. Module Serial # 0x0 0x6511DD08 0x92CC48BA
  16. Module Manufacturing Location 0 2 2
  17. # of Row Addressing Bits 15 14 14
  18. # of Column Addressing Bits 10 10 10
  19. # of Banks 8 8 8
  20. # of Ranks 2 2 2
  21. Device Width in Bits 8 8 8
  22. Bus Width in Bits 64 64 64
  23. Module Voltage 1.5V 1.5V 1.5V
  24. CAS Latencies Supported 6 7 8 9 6 7 8 9 6 7 8 9
  25. Timings @ Max Frequency (JEDEC) 9-9-9-24 9-9-9-24 9-9-9-24
  26. Maximum frequency (MHz) 667 667 667
  27. Maximum Transfer Speed (MHz) DDR3-1333 DDR3-1333 DDR3-1333
  28. Maximum Bandwidth (MB/s) PC3-10600 PC3-10600 PC3-10600
  29. Minimum Clock Cycle Time, tCK (ns) 1.500 1.500 1.500
  30. Minimum CAS Latency Time, tAA (ns) 13.125 13.125 13.125
  31. Minimum RAS to CAS Delay, tRCD (ns) 13.125 13.125 13.125
  32. Minimum Row Precharge Time, tRP (ns) 13.125 13.125 13.125
  33. Minimum Active to Precharge Time, tRAS (ns) 36.000 36.000 36.000
  34. Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000 6.000
  35. Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 49.125 49.125 49.125
  36. Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 160.000 110.000 110.000
  37. DDR3 Specific SPD Attributes
  38. Write Recovery Time, tWR (ns) 15.000 15.000 15.000
  39. Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500 7.500
  40. Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500 7.500
  41. Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000 30.000
  42. Maximum Activate Window in units of tREFI 0 0 0
  43. RZQ / 6 Supported Yes Yes Yes
  44. RZQ / 7 Supported Yes Yes Yes
  45. DLL-Off Mode Supported Yes Yes Yes
  46. Maximum Operating Temperature Range (C) 0-95 0-95 0-95
  47. Refresh Rate at Extended Operating Temperature Range 2X 2X 2X
  48. Auto-self Refresh Supported Yes No No
  49. On-die Thermal Sensor Readout Supported No No No
  50. Partial Array Self Refresh Supported No No No
  51. Thermal Sensor Present No No No
  52. Non-standard SDRAM Type Standard Monolithic Standard Monolithic Standard Monolithic
  53. Maxium Activate Count (MAC)
  54. Module Type UDIMM UDIMM UDIMM
  55. Module Height (mm) 30 30 30
  56. Module Thickness (front), (mm) 2 2 2
  57. Module Thickness (back), (mm) 2 2 2
  58. Module Width (mm) 133.5 133.5 133.5
  59. Reference Raw Card Used Raw Card B Rev. 0 Raw Card B Rev. 0 Raw Card B Rev. 0
  60. DRAM Manufacture Samsung Samsung
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