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decode-dimms output

May 13th, 2020
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  1. # decode-dimms version $Revision$
  2.  
  3. Memory Serial Presence Detect Decoder
  4. By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
  5. Jean Delvare, Trent Piepho and others
  6.  
  7.  
  8. Decoding EEPROM 0-0050 0-0051 0-0052 0-0053
  9. Guessing DIMM is in bank 1 bank 2 bank 3 bank 4
  10.  
  11. ---=== SPD EEPROM Information ===---
  12. EEPROM CRC of bytes 0-125 OK (0xC434)
  13. # of bytes written to SDRAM EEPROM 384
  14. Total number of bytes in EEPROM 512
  15. Fundamental Memory type DDR4 SDRAM
  16. SPD Revision 1.1
  17. Module Type UDIMM
  18. EEPROM CRC of bytes 128-253 OK (0xD6A6)
  19.  
  20. ---=== Memory Characteristics ===---
  21. Maximum module speed 2666 MHz (PC4-21300)
  22. Size 16384 MB
  23. Banks x Rows x Columns x Bits 16 x 16 x 10 x 64
  24. SDRAM Device Width 8 bits
  25. Ranks 2
  26. Rank Mix Symmetrical
  27. Bus Width Extension 8 bits
  28. AA-RCD-RP-RAS (cycles) 19-19-19-43
  29. Supported CAS Latencies 20T, 19T, 18T, 17T, 16T, 15T, 14T, 13T, 12T, 11T, 10T
  30.  
  31. ---=== Timings at Standard Speeds ===---
  32. AA-RCD-RP-RAS (cycles) as DDR4-2666 19-19-19-43
  33. AA-RCD-RP-RAS (cycles) as DDR4-2400 17-17-17-39
  34. AA-RCD-RP-RAS (cycles) as DDR4-2133 15-15-15-35
  35. AA-RCD-RP-RAS (cycles) as DDR4-1866 13-13-13-30
  36. AA-RCD-RP-RAS (cycles) as DDR4-1600 11-11-11-26
  37.  
  38. ---=== Timing Parameters ===---
  39. Minimum Cycle Time (tCKmin) 0.750 ns
  40. Maximum Cycle Time (tCKmax) 1.600 ns
  41. Minimum CAS Latency Time (tAA) 13.750 ns
  42. Minimum RAS to CAS Delay (tRCD) 13.750 ns
  43. Minimum Row Precharge Delay (tRP) 13.750 ns
  44. Minimum Active to Precharge Delay (tRAS) 32.000 ns
  45. Minimum Active to Auto-Refresh Delay (tRC) 45.750 ns
  46. Minimum Recovery Delay (tRFC1) 350.000 ns
  47. Minimum Recovery Delay (tRFC2) 260.000 ns
  48. Minimum Recovery Delay (tRFC4) 160.000 ns
  49. Minimum Four Activate Window Delay (tFAW) 21.000 ns
  50. Minimum Row Active to Row Active Delay (tRRD_S) 3.000 ns
  51. Minimum Row Active to Row Active Delay (tRRD_L) 4.900 ns
  52. Minimum CAS to CAS Delay (tCCD_L) 5.000 ns
  53. Minimum Write Recovery Time (tWR) 15.000 ns
  54. Minimum Write to Read Time (tWTR_S) 2.500 ns
  55. Minimum Write to Read Time (tWTR_L) 7.500 ns
  56.  
  57. ---=== Other Information ===---
  58. Package Type Monolithic
  59. Maximum Activate Count Unlimited
  60. Post Package Repair One row per bank group
  61. Soft PPR Supported
  62. Module Nominal Voltage 1.2 V
  63. Thermal Sensor TSE2004 compliant
  64.  
  65. ---=== Physical Characteristics ===---
  66. Module Height 32 mm
  67. Module Thickness 2 mm front, 2 mm back
  68. Module Reference Card E revision 1
  69.  
  70. ---=== Manufacturer Data ===---
  71. Module Manufacturer Kingston
  72. DRAM Manufacturer Micron Technology
  73. Manufacturing Location Code 0x01
  74. Manufacturing Date 2019-W49
  75. Assembly Serial Number 0x214949C2 0x20494A15 0x20494989 0xD1494700
  76. Part Number 9965745-002.A00G
  77.  
  78.  
  79. Number of SDRAM DIMMs detected and decoded: 4
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