HWiNFO® 64 Version 8.26-5730

LAPTOP-8XXXXXXX -----------------------------------------------------------

 [Current Computer]
 [Operating System]

Memory --------------------------------------------------------------------

 [General Information]
  Total Memory Size:                      32 GBytes
  Total Memory Size [MB]:                 32768
 [Current Performance Settings]
  Current Memory Clock:                   2593.7 MHz
  Current Timing (tCAS-tRCD-tRP-tRAS):    46-46-46-84
  Memory Channels Supported:              4
  Memory Channels Active:                 4
  Command Rate (CR):                      2T
  Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 14T
  Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group: 8T
  Read to Read Delay (tRDRD_SD) Same DIMM: 14T
  Read to Read Delay (tRDRD_DD) Different DIMM: 14T
  Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 28T
  Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group: 8T
  Write to Write Delay (tWRWR_SD) Same DIMM: 16T
  Write to Write Delay (tWRWR_DD) Different DIMM: 16T
  Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 20T
  Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 20T
  Read to Write Delay (tRDWR_SD) Same DIMM: 22T
  Read to Write Delay (tRDWR_DD) Different DIMM: 22T
  Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 82T
  Write to Read Delay (tWRRD_DG/TwrrdScDlr) Different Bank Group: 62T
  Write to Read Delay (tWRRD_SD) Same DIMM: 12T
  Write to Read Delay (tWRRD_DD) Different DIMM: 12T
  Read to Precharge Delay (tRTP):         19T
  Write to Precharge Delay (tWTP):        88T
  Write Recovery Time (tWR):              77T
  RAS# to RAS# Delay (tRRD_L):            13T
  RAS# to RAS# Delay (tRRD_S):            8T
  Row Cycle Time (tRC):                   130T
  Refresh Cycle Time (tRFC):              570T
  Four Activate Window (tFAW):            32T

Row: 0 [BANK 0/Controller0-ChannelA-DIMM0] - 16 GB PC5-44800 DDR5 SDRAM Kingston KF556S40IB-16

 [General Module Information]
  Module Number:                          0
  Module Size:                            16 GBytes
  Memory Type:                            DDR5 SDRAM
  Module Type:                            SO-DIMM
  Memory Speed:                           2800.0 MHz (DDR5-5600 / PC5-44800)
  Module Manufacturer:                    Kingston
  Module Part Number:                     KF556S40IB-16
  Module Revision:                        0.0
  Module Serial Number:                   5 (05000000)
  Module Manufacturing Date:              Year: 2025, Week: 8
  Module Manufacturing Location:          0
  SDRAM Manufacturer:                     Micron
  DRAM Steppping:                         B-Die (4.2)
  Error Check/Correction:                 None
 [Module Characteristics]
  Rank Mix:                               Symmetrical
  Row Address Bits:                       16
  Column Address Bits:                    10
  Module Density:                         16384 Mb
  Dies Per Package:                       1
  Device Width:                           x8
  Number Of Bank Groups:                  8
  Banks Per Group:                        4
  Number Of Ranks:                        1
  Module Device Width:                    x4
  Channels Per DIMM:                      x2
  Primary Bus Width:                      x32
  Bus Extension:                          None
  Module Voltage (VDD):                   Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
  Module Voltage (VDDQ):                  Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
  Module Voltage (VPP):                   Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
  Wide Temperature Sense:                 Supported
  Bounded Fault:                          Supported
  BL32:                                   Not Supported
  Non-Standard Core Timings:              Not Supported
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.35700 ns (2800 MHz)
  Maximum SDRAM Cycle Time (tCKAVGmax):   1.01000 ns
  CAS# Latencies Supported:               22, 28, 30, 32, 36, 40, 42, 46, 50
  Minimum CAS# Latency Time (tAAmin):     16.428 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   17.708 ns
  Minimum Row Precharge Time (tRPmin):    17.708 ns
  Minimum Active to Precharge Time (tRASmin): 32.768 ns
  Supported Module Timing at 2800.0 MHz:  46-50-50-92
  Supported Module Timing at 2400.0 MHz:  40-43-43-79
  Supported Module Timing at 1800.0 MHz:  30-32-32-59
  Supported Module Timing at 1600.0 MHz:  28-29-29-53
  Minimum Active to Active/Refresh Time (tRCmin): 50.476 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 410.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 220.000 ns
  Minimum Refresh Recovery Time Delay (tRFCsbmin): 190.000 ns
  Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
  Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
  Activate to Activate Command Delay for Same Bank Group (tRRD_L): 5.000 ns
  Read to Read Command Delay for Same Bank Group (tCCD_L): 5.000 ns
  Write to Write Command Delay for Same Bank Group (tCCD_L_WR): 20.000 ns
  Write to Write Command Delay for Same Bank Group, Second Write not RMW (tCCD_L_WR2): 10.000 ns
  Four Activate Window (tFAW):            11.428 ns
  Write to Read Command Delay for Same Bank Group (tCCD_L_WTR): 10.000 ns
  Write to Read Command Delay for Different Bank Group (tCCD_S_WTR): 2.500 ns
  Read to Precharge Command Delay (tRTP): 7.500 ns
  SPD Manufacturer:                       TeraDevices
  SPD Type:                               SPD5118
  SPD Steppping:                          1.4
  PMIC0 Device:                           Present
  PMIC0 Manufacturer:                     Global Mixed-mode Technology
  PMIC0 Device Type:                      PMIC5100
  PMIC0 Stepping:                         1.2
  PMIC0 Type:                             Small PMIC (Low Current)
  PMIC0 Secure Mode:                      Disabled
  Thermal Sensor 0:                       Not Present
  Thermal Sensor 1:                       Not Present
  DRAM Temperature Grade:                 Elevated (ET) : -25 - 105 C
  Heat Spreader:                          Not Present
  Vin_bulk Fuse:                          Not Present
  Vin_bulk Transient Voltage Suppression (TVS): Not Present
  Vin_mgmt Transient Voltage Suppression (TVS): Not Present
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        <= 1 mm

Row: 2 [BANK 0/Controller1-ChannelA-DIMM0] - 16 GB PC5-44800 DDR5 SDRAM Kingston KF556S40IB-16

 [General Module Information]
  Module Number:                          2
  Module Size:                            16 GBytes
  Memory Type:                            DDR5 SDRAM
  Module Type:                            SO-DIMM
  Memory Speed:                           2800.0 MHz (DDR5-5600 / PC5-44800)
  Module Manufacturer:                    Kingston
  Module Part Number:                     KF556S40IB-16
  Module Revision:                        0.0
  Module Serial Number:                   6 (06000000)
  Module Manufacturing Date:              Year: 2025, Week: 8
  Module Manufacturing Location:          0
  SDRAM Manufacturer:                     Micron
  DRAM Steppping:                         B-Die (4.2)
  Error Check/Correction:                 None
 [Module Characteristics]
  Rank Mix:                               Symmetrical
  Row Address Bits:                       16
  Column Address Bits:                    10
  Module Density:                         16384 Mb
  Dies Per Package:                       1
  Device Width:                           x8
  Number Of Bank Groups:                  8
  Banks Per Group:                        4
  Number Of Ranks:                        1
  Module Device Width:                    x4
  Channels Per DIMM:                      x2
  Primary Bus Width:                      x32
  Bus Extension:                          None
  Module Voltage (VDD):                   Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
  Module Voltage (VDDQ):                  Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
  Module Voltage (VPP):                   Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
  Wide Temperature Sense:                 Supported
  Bounded Fault:                          Supported
  BL32:                                   Not Supported
  Non-Standard Core Timings:              Not Supported
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.35700 ns (2800 MHz)
  Maximum SDRAM Cycle Time (tCKAVGmax):   1.01000 ns
  CAS# Latencies Supported:               22, 28, 30, 32, 36, 40, 42, 46, 50
  Minimum CAS# Latency Time (tAAmin):     16.428 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   17.708 ns
  Minimum Row Precharge Time (tRPmin):    17.708 ns
  Minimum Active to Precharge Time (tRASmin): 32.768 ns
  Supported Module Timing at 2800.0 MHz:  46-50-50-92
  Supported Module Timing at 2400.0 MHz:  40-43-43-79
  Supported Module Timing at 1800.0 MHz:  30-32-32-59
  Supported Module Timing at 1600.0 MHz:  28-29-29-53
  Minimum Active to Active/Refresh Time (tRCmin): 50.476 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 410.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 220.000 ns
  Minimum Refresh Recovery Time Delay (tRFCsbmin): 190.000 ns
  Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
  Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
  Activate to Activate Command Delay for Same Bank Group (tRRD_L): 5.000 ns
  Read to Read Command Delay for Same Bank Group (tCCD_L): 5.000 ns
  Write to Write Command Delay for Same Bank Group (tCCD_L_WR): 20.000 ns
  Write to Write Command Delay for Same Bank Group, Second Write not RMW (tCCD_L_WR2): 10.000 ns
  Four Activate Window (tFAW):            11.428 ns
  Write to Read Command Delay for Same Bank Group (tCCD_L_WTR): 10.000 ns
  Write to Read Command Delay for Different Bank Group (tCCD_S_WTR): 2.500 ns
  Read to Precharge Command Delay (tRTP): 7.500 ns
  SPD Manufacturer:                       TeraDevices
  SPD Type:                               SPD5118
  SPD Steppping:                          1.4
  PMIC0 Device:                           Present
  PMIC0 Manufacturer:                     Global Mixed-mode Technology
  PMIC0 Device Type:                      PMIC5100
  PMIC0 Stepping:                         1.2
  PMIC0 Type:                             Small PMIC (Low Current)
  PMIC0 Secure Mode:                      Disabled
  Thermal Sensor 0:                       Not Present
  Thermal Sensor 1:                       Not Present
  DRAM Temperature Grade:                 Elevated (ET) : -25 - 105 C
  Heat Spreader:                          Not Present
  Vin_bulk Fuse:                          Not Present
  Vin_bulk Transient Voltage Suppression (TVS): Not Present
  Vin_mgmt Transient Voltage Suppression (TVS): Not Present
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        <= 1 mm