HWiNFO64 Version 6.10-3880

Central Processor(s) ------------------------------------------------------

 [CPU Unit Count]
  Number Of Processor Packages (Physical): 1
  Number Of Processor Cores:              4
  Number Of Logical Processors:           8

Intel Core i7-920 ---------------------------------------------------------

 [General Information]
  Processor Name:                         Intel Core i7-920
  Original Processor Frequency:           2666.7 MHz
  Original Processor Frequency [MHz]:     2667
  CPU ID:                                 000106A4
  CPU Brand Name:                         Intel(R) Core(TM) i7 CPU         920  @ 2.67GHz
  CPU Vendor:                             GenuineIntel
  CPU Stepping:                           C0/C1
  CPU Code Name:                          Bloomfield
  CPU Technology:                         45 nm
  CPU S-Spec:                             SLBCH
  CPU Thermal Design Power (TDP):         130.0 W
  CPU Thermal Design Current (TDC):       110.0 A
  CPU Max. Case Temperature (Tcase_max):  67.9 °C
  CPU Max. Junction Temperature (Tj,max): 100 °C
  CPU Type:                               Production Unit
  CPU Platform:                           Socket B1 (LGA1366 FC-LGA6)
  Microcode Update Revision:              12
  Number of CPU Cores:                    4
  Number of Logical CPUs:                 8

Motherboard ---------------------------------------------------------------

 [Computer]
  Computer Brand Name:                    DELL Studio XPS 435MT
 [Motherboard]
  Motherboard Model:                      DELL 0R849J
  Motherboard Chipset:                    Intel X58 (Tylersburg 36S) + ICH10R
  Motherboard Slots:                      3xPCI Express x1, 1xPCI Express x4, 2xPCI Express x16
  PCI Express Version Supported:          v2.0
  USB Version Supported:                  v2.0
 [ICH10 Features]
  Intel AMT Support:                      Not Supported
  SATA RAID 0/1/5/10:                     Supported
 [BIOS]
  BIOS Manufacturer:                      American Megatrends
  BIOS Date:                              12/21/2009
  BIOS Version:                           1.1.4
  UEFI BIOS:                              Not Capable
  Super-IO/LPC Chip:                      ITE IT8720F/CX

Memory Controller ---------------------------------------------------------

  Error Detecting Method:                 64-bit ECC
  Error Correction:                       None
  Supported Interleave:                   1-Way
  Current Interleave:                     1-Way
  Max. Memory Module Size:                2048 MBytes
  Supported Memory Speed:                 70 ns, 60 ns
  Supported Memory Type:                  DIMM, SDRAM
  Supported Memory Voltage:               3.3 V
  Associated Memory Slots:                6

DIMM1 ---------------------------------------------------------------------

  Socket Designation:                     DIMM1
  Memory Type:
  Memory Speed:                           Unknown
  Installed size:                         Not installed
  Enabled size:                           Not installed

DIMM2 ---------------------------------------------------------------------

  Socket Designation:                     DIMM2
  Memory Type:
  Memory Speed:                           Unknown
  Installed size:                         Not installed
  Enabled size:                           Not installed

DIMM3 ---------------------------------------------------------------------

  Socket Designation:                     DIMM3
  Memory Type:
  Memory Speed:                           Unknown
  Installed size:                         Not installed
  Enabled size:                           Not installed

DIMM4 ---------------------------------------------------------------------

  Socket Designation:                     DIMM4
  Memory Type:
  Memory Speed:                           Unknown
  Installed size:                         Not installed
  Enabled size:                           Not installed

DIMM5 ---------------------------------------------------------------------

  Socket Designation:                     DIMM5
  Memory Type:
  Memory Speed:                           Unknown
  Installed size:                         Not installed
  Enabled size:                           Not installed

DIMM6 ---------------------------------------------------------------------

  Socket Designation:                     DIMM6
  Memory Type:
  Memory Speed:                           Unknown
  Installed size:                         Not installed
  Enabled size:                           Not installed

Physical Memory Array -----------------------------------------------------

  Array Location:                         System board
  Array Use:                              System memory
  Error Detecting Method:                 None
  Memory Capacity:                        12 GBytes
  Memory Devices:                         6

Memory Array Mapped Address -----------------------------------------------

  Starting Address:                       00000000
  Ending Address:                         00000000
  Partition Width:                        1

Memory Device -------------------------------------------------------------

  Total Width:                            64 bits
  Data Width:                             64 bits
  Device Size:                            0 MBytes
  Device Form Factor:                     DIMM
  Device Locator:                         DIMM1
  Bank Locator:                           Unknown
  Device Type:                            Unknown
  Device Type Detail:                     FP, Static column, Pseudo-static, RAMBUS
  Memory Speed:                           1066 MHz
  Manufacturer:                           Hyundai
  Serial Number:                          00002A30
  Part Number:                            HMT112U6AFP8C-G7
  Asset Tag:                              010848

Memory Device Mapped Address ----------------------------------------------

  Starting Address:                       00000000
  Ending Address:                         00000000
  Partition Row Position:                 1
  Interleave Position:                    Non-interleaved
  Interleave Data Depth:                  2

Memory Device -------------------------------------------------------------

  Total Width:                            64 bits
  Data Width:                             64 bits
  Device Size:                            1024 MBytes
  Device Form Factor:                     DIMM
  Device Locator:                         DIMM2
  Bank Locator:                           Unknown
  Device Type:                            Unknown
  Device Type Detail:                     FP, Static column, Pseudo-static, RAMBUS
  Memory Speed:                           1066 MHz
  Manufacturer:                           Hyundai
  Serial Number:                          00001E30
  Part Number:                            HMT112U6AFP8C-G7
  Asset Tag:                              010848

Memory Device Mapped Address ----------------------------------------------

  Starting Address:                       00000000
  Ending Address:                         00000000
  Partition Row Position:                 1
  Interleave Position:                    Non-interleaved
  Interleave Data Depth:                  2

Memory Device -------------------------------------------------------------

  Total Width:                            64 bits
  Data Width:                             64 bits
  Device Size:                            0 MBytes
  Device Form Factor:                     DIMM
  Device Locator:                         DIMM3
  Bank Locator:                           Unknown
  Device Type:                            Unknown
  Device Type Detail:                     FP, Static column, Pseudo-static, RAMBUS
  Memory Speed:                           1066 MHz
  Manufacturer:                           Hyundai
  Serial Number:                          00002920
  Part Number:                            HMT112U6AFP8C-G7
  Asset Tag:                              010848

Memory Device Mapped Address ----------------------------------------------

  Starting Address:                       00000000
  Ending Address:                         00000000
  Partition Row Position:                 1
  Interleave Position:                    Non-interleaved
  Interleave Data Depth:                  2

Memory Device -------------------------------------------------------------

  Total Width:                            64 bits
  Data Width:                             64 bits
  Device Size:                            0 MBytes
  Device Form Factor:                     DIMM
  Device Locator:                         DIMM4
  Bank Locator:                           Unknown
  Device Type:                            Unknown
  Device Type Detail:                     FP, Static column, Pseudo-static, RAMBUS
  Memory Speed:                           1333 MHz
  Manufacturer:                           Hyundai
  Serial Number:                          6E1AC022
  Part Number:                            HMT112U6AFP8C-H9
  Asset Tag:                              010912

Memory Device Mapped Address ----------------------------------------------

  Starting Address:                       00000000
  Ending Address:                         00000000
  Partition Row Position:                 1
  Interleave Position:                    Non-interleaved
  Interleave Data Depth:                  2

Memory Device -------------------------------------------------------------

  Total Width:                            64 bits
  Data Width:                             64 bits
  Device Size:                            1024 MBytes
  Device Form Factor:                     DIMM
  Device Locator:                         DIMM5
  Bank Locator:                           Unknown
  Device Type:                            Unknown
  Device Type Detail:                     FP, Static column, Pseudo-static, RAMBUS
  Memory Speed:                           1333 MHz
  Manufacturer:                           Hyundai
  Serial Number:                          6D1A3022
  Part Number:                            HMT112U6AFP8C-H9
  Asset Tag:                              010912

Memory Device Mapped Address ----------------------------------------------

  Starting Address:                       00000000
  Ending Address:                         00000000
  Partition Row Position:                 1
  Interleave Position:                    Non-interleaved
  Interleave Data Depth:                  2

Memory Device -------------------------------------------------------------

  Total Width:                            64 bits
  Data Width:                             64 bits
  Device Size:                            0 MBytes
  Device Form Factor:                     DIMM
  Device Locator:                         DIMM6
  Bank Locator:                           Unknown
  Device Type:                            Unknown
  Device Type Detail:                     FP, Static column, Pseudo-static, RAMBUS
  Memory Speed:                           1333 MHz
  Manufacturer:                           Hyundai
  Serial Number:                          421A6022
  Part Number:                            HMT112U6AFP8C-H9
  Asset Tag:                              010912

Memory Device Mapped Address ----------------------------------------------

  Starting Address:                       00000000
  Ending Address:                         00000000
  Partition Row Position:                 1
  Interleave Position:                    Non-interleaved
  Interleave Data Depth:                  2

Memory --------------------------------------------------------------------

 [General information]
  Total Memory Size:                      6 GBytes
  Total Memory Size [MB]:                 6144
 [Current Performance Settings]
  Maximum Supported Memory Clock:         533.3 MHz (4 : 1 ratio)
  Current Memory Clock:                   532.1 MHz (4 : 1 ratio)
  Current Timing (tCAS-tRCD-tRP-tRAS):    7-7-7-20
  Memory Channels Supported:              3
  Memory Channels Active:                 3
  Command Rate:                           2T
  Read to Read Delay (tRD_RD) Same Rank:  4T
  Read to Read Delay (tRD_RD) Different Rank: 6T
  Read to Read Delay (tRD_RD) Different DIMM: 7T
  Write to Write Delay (tWR_WR) Same Rank: 4T
  Write to Write Delay (tWR_WR) Different Rank: 7T
  Write to Write Delay (tWR_WR) Different DIMM: 7T
  Read to Write Delay (tRD_WR) Same Rank: 9T
  Read to Write Delay (tRD_WR) Different Rank: 9T
  Read to Write Delay (tRD_WR) Different DIMM: 9T
  Write to Read Delay (tWR_RD) Same Rank (tWTR): 14T
  Write to Read Delay (tWR_RD) Different Rank: 6T
  Write to Read Delay (tWR_RD) Different DIMM: 6T
  Read to Precharge Delay (tRTP):         4T
  Write to Precharge Delay (tWTP):        18T
  Write Recovery Time (tWR):              7T
  RAS# to RAS# Delay (tRRD):              4T
  Refresh Cycle Time (tRFC):              59T
  Four Activate Window (tFAW):            20T

Row: 0 - 1 GB PC3-8500 DDR3 SDRAM SK Hynix HMT112U6AFP8C-G7 ---------------

 [General Module Information]
  Module Number:                          0
  Module Size:                            1 GBytes
  Memory Type:                            DDR3 SDRAM
  Module Type:                            Unbuffered DIMM (UDIMM)
  Memory Speed:                           533.3 MHz (DDR3-1066 / PC3-8500)
  Module Manufacturer:                    SK Hynix
  Module Part Number:                     HMT112U6AFP8C-G7
  Module Revision:                        12366
  Module Serial Number:                   10800
  Module Manufacturing Date:              Year: 2008, Week: 48
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     SK Hynix
  Error Check/Correction:                 None
 [Module characteristics]
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
  Module Density:                         1024 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Module Nominal Voltage (VDD):           1.5 V
 [Module timing]
  Minimum SDRAM Cycle Time (tCKmin):      1.875 ns
  CAS# Latencies Supported:               6, 7, 8
  Minimum CAS# Latency Time (tAAmin):     13.125 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.125 ns
  Minimum Row Precharge Time (tRPmin):    13.125 ns
  Minimum Active to Precharge Time (tRASmin): 37.500 ns
  Supported Module Timing at 533.3 MHz:   7-7-7-20
  Supported Module Timing at 400.0 MHz:   6-6-6-15
  Minimum Write Recovery Time (tWRmin):   15.000 ns
  Minimum Row Active to Row Active Delay (tRRDmin): 7.500 ns
  Minimum Active to Active/Refresh Time (tRCmin): 50.625 ns
  Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
  Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
  Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 37.500 ns
 [Features]
  Partial Array Self Refresh (PASR):      Not Supported
  On-die Thermal Sensor (ODTS) Readout:   Supported
  Auto Self Refresh (ASR):                Supported
  Extended Temperature 1X Refresh Rate:   Not Supported
  Extended Temperature Range:             Supported
  Module Temperature Sensor:              Not Supported
  Pseudo Target Row Refresh (pTRR):       Not Supported
  Module Nominal Height:                  30 - 31 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm

Row: 1 - 1 GB PC3-10600 DDR3 SDRAM SK Hynix HMT112U6AFP8C-H9 --------------

 [General Module Information]
  Module Number:                          1
  Module Size:                            1 GBytes
  Memory Type:                            DDR3 SDRAM
  Module Type:                            Unbuffered DIMM (UDIMM)
  Memory Speed:                           666.7 MHz (DDR3-1333 / PC3-10600)
  Module Manufacturer:                    SK Hynix
  Module Part Number:                     HMT112U6AFP8C-H9
  Module Revision:                        12366
  Module Serial Number:                   1847246882
  Module Manufacturing Date:              Year: 2009, Week: 12
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     SK Hynix
  Error Check/Correction:                 None
 [Module characteristics]
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
  Module Density:                         1024 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Module Nominal Voltage (VDD):           1.5 V
 [Module timing]
  Minimum SDRAM Cycle Time (tCKmin):      1.500 ns
  CAS# Latencies Supported:               6, 7, 8, 9
  Minimum CAS# Latency Time (tAAmin):     13.125 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.125 ns
  Minimum Row Precharge Time (tRPmin):    13.125 ns
  Minimum Active to Precharge Time (tRASmin): 36.000 ns
  Supported Module Timing at 666.7 MHz:   9-9-9-24
  Supported Module Timing at 533.3 MHz:   7-7-7-20
  Supported Module Timing at 400.0 MHz:   6-6-6-15
  Minimum Write Recovery Time (tWRmin):   15.000 ns
  Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
  Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
  Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
  Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
  Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
 [Features]
  Partial Array Self Refresh (PASR):      Not Supported
  On-die Thermal Sensor (ODTS) Readout:   Not Supported
  Auto Self Refresh (ASR):                Supported
  Extended Temperature 1X Refresh Rate:   Not Supported
  Extended Temperature Range:             Supported
  Module Temperature Sensor:              Not Supported
  Pseudo Target Row Refresh (pTRR):       Not Supported
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm

Row: 2 - 1 GB PC3-8500 DDR3 SDRAM SK Hynix HMT112U6AFP8C-G7 ---------------

 [General Module Information]
  Module Number:                          2
  Module Size:                            1 GBytes
  Memory Type:                            DDR3 SDRAM
  Module Type:                            Unbuffered DIMM (UDIMM)
  Memory Speed:                           533.3 MHz (DDR3-1066 / PC3-8500)
  Module Manufacturer:                    SK Hynix
  Module Part Number:                     HMT112U6AFP8C-G7
  Module Revision:                        12366
  Module Serial Number:                   7728
  Module Manufacturing Date:              Year: 2008, Week: 48
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     SK Hynix
  Error Check/Correction:                 None
 [Module characteristics]
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
  Module Density:                         1024 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Module Nominal Voltage (VDD):           1.5 V
 [Module timing]
  Minimum SDRAM Cycle Time (tCKmin):      1.875 ns
  CAS# Latencies Supported:               6, 7, 8
  Minimum CAS# Latency Time (tAAmin):     13.125 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.125 ns
  Minimum Row Precharge Time (tRPmin):    13.125 ns
  Minimum Active to Precharge Time (tRASmin): 37.500 ns
  Supported Module Timing at 533.3 MHz:   7-7-7-20
  Supported Module Timing at 400.0 MHz:   6-6-6-15
  Minimum Write Recovery Time (tWRmin):   15.000 ns
  Minimum Row Active to Row Active Delay (tRRDmin): 7.500 ns
  Minimum Active to Active/Refresh Time (tRCmin): 50.625 ns
  Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
  Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
  Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 37.500 ns
 [Features]
  Partial Array Self Refresh (PASR):      Not Supported
  On-die Thermal Sensor (ODTS) Readout:   Supported
  Auto Self Refresh (ASR):                Supported
  Extended Temperature 1X Refresh Rate:   Not Supported
  Extended Temperature Range:             Supported
  Module Temperature Sensor:              Not Supported
  Pseudo Target Row Refresh (pTRR):       Not Supported
  Module Nominal Height:                  30 - 31 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm

Row: 3 - 1 GB PC3-10600 DDR3 SDRAM SK Hynix HMT112U6AFP8C-H9 --------------

 [General Module Information]
  Module Number:                          3
  Module Size:                            1 GBytes
  Memory Type:                            DDR3 SDRAM
  Module Type:                            Unbuffered DIMM (UDIMM)
  Memory Speed:                           666.7 MHz (DDR3-1333 / PC3-10600)
  Module Manufacturer:                    SK Hynix
  Module Part Number:                     HMT112U6AFP8C-H9
  Module Revision:                        12366
  Module Serial Number:                   1830432802
  Module Manufacturing Date:              Year: 2009, Week: 12
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     SK Hynix
  Error Check/Correction:                 None
 [Module characteristics]
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
  Module Density:                         1024 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Module Nominal Voltage (VDD):           1.5 V
 [Module timing]
  Minimum SDRAM Cycle Time (tCKmin):      1.500 ns
  CAS# Latencies Supported:               6, 7, 8, 9
  Minimum CAS# Latency Time (tAAmin):     13.125 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.125 ns
  Minimum Row Precharge Time (tRPmin):    13.125 ns
  Minimum Active to Precharge Time (tRASmin): 36.000 ns
  Supported Module Timing at 666.7 MHz:   9-9-9-24
  Supported Module Timing at 533.3 MHz:   7-7-7-20
  Supported Module Timing at 400.0 MHz:   6-6-6-15
  Minimum Write Recovery Time (tWRmin):   15.000 ns
  Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
  Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
  Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
  Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
  Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
 [Features]
  Partial Array Self Refresh (PASR):      Not Supported
  On-die Thermal Sensor (ODTS) Readout:   Not Supported
  Auto Self Refresh (ASR):                Supported
  Extended Temperature 1X Refresh Rate:   Not Supported
  Extended Temperature Range:             Supported
  Module Temperature Sensor:              Not Supported
  Pseudo Target Row Refresh (pTRR):       Not Supported
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm

Row: 4 - 1 GB PC3-8500 DDR3 SDRAM SK Hynix HMT112U6AFP8C-G7 ---------------

 [General Module Information]
  Module Number:                          4
  Module Size:                            1 GBytes
  Memory Type:                            DDR3 SDRAM
  Module Type:                            Unbuffered DIMM (UDIMM)
  Memory Speed:                           533.3 MHz (DDR3-1066 / PC3-8500)
  Module Manufacturer:                    SK Hynix
  Module Part Number:                     HMT112U6AFP8C-G7
  Module Revision:                        12366
  Module Serial Number:                   10528
  Module Manufacturing Date:              Year: 2008, Week: 48
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     SK Hynix
  Error Check/Correction:                 None
 [Module characteristics]
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
  Module Density:                         1024 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Module Nominal Voltage (VDD):           1.5 V
 [Module timing]
  Minimum SDRAM Cycle Time (tCKmin):      1.875 ns
  CAS# Latencies Supported:               6, 7, 8
  Minimum CAS# Latency Time (tAAmin):     13.125 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.125 ns
  Minimum Row Precharge Time (tRPmin):    13.125 ns
  Minimum Active to Precharge Time (tRASmin): 37.500 ns
  Supported Module Timing at 533.3 MHz:   7-7-7-20
  Supported Module Timing at 400.0 MHz:   6-6-6-15
  Minimum Write Recovery Time (tWRmin):   15.000 ns
  Minimum Row Active to Row Active Delay (tRRDmin): 7.500 ns
  Minimum Active to Active/Refresh Time (tRCmin): 50.625 ns
  Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
  Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
  Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 37.500 ns
 [Features]
  Partial Array Self Refresh (PASR):      Not Supported
  On-die Thermal Sensor (ODTS) Readout:   Supported
  Auto Self Refresh (ASR):                Supported
  Extended Temperature 1X Refresh Rate:   Not Supported
  Extended Temperature Range:             Supported
  Module Temperature Sensor:              Not Supported
  Pseudo Target Row Refresh (pTRR):       Not Supported
  Module Nominal Height:                  30 - 31 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm

Row: 5 - 1 GB PC3-10600 DDR3 SDRAM SK Hynix HMT112U6AFP8C-H9 --------------

 [General Module Information]
  Module Number:                          5
  Module Size:                            1 GBytes
  Memory Type:                            DDR3 SDRAM
  Module Type:                            Unbuffered DIMM (UDIMM)
  Memory Speed:                           666.7 MHz (DDR3-1333 / PC3-10600)
  Module Manufacturer:                    SK Hynix
  Module Part Number:                     HMT112U6AFP8C-H9
  Module Revision:                        12366
  Module Serial Number:                   1109024802
  Module Manufacturing Date:              Year: 2009, Week: 12
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     SK Hynix
  Error Check/Correction:                 None
 [Module characteristics]
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
  Module Density:                         1024 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Module Nominal Voltage (VDD):           1.5 V
 [Module timing]
  Minimum SDRAM Cycle Time (tCKmin):      1.500 ns
  CAS# Latencies Supported:               6, 7, 8, 9
  Minimum CAS# Latency Time (tAAmin):     13.125 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.125 ns
  Minimum Row Precharge Time (tRPmin):    13.125 ns
  Minimum Active to Precharge Time (tRASmin): 36.000 ns
  Supported Module Timing at 666.7 MHz:   9-9-9-24
  Supported Module Timing at 533.3 MHz:   7-7-7-20
  Supported Module Timing at 400.0 MHz:   6-6-6-15
  Minimum Write Recovery Time (tWRmin):   15.000 ns
  Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
  Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
  Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
  Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
  Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
 [Features]
  Partial Array Self Refresh (PASR):      Not Supported
  On-die Thermal Sensor (ODTS) Readout:   Not Supported
  Auto Self Refresh (ASR):                Supported
  Extended Temperature 1X Refresh Rate:   Not Supported
  Extended Temperature Range:             Supported
  Module Temperature Sensor:              Not Supported
  Pseudo Target Row Refresh (pTRR):       Not Supported
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm