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  1. Manufacturing Description
  2.  
  3. Module Manufacturer: Corsair
  4. Module Part Number: CMK32GX4M2B3000C15
  5. Module Series: Vengeance LPX
  6. DRAM Manufacturer: Hynix
  7. DRAM Components: H5AN8G8NMFR-TFC
  8. DRAM Die Revision / Lithography Resolution: M / 25 nm
  9. Module Manufacturing Date: Undefined
  10. Module Manufacturing Location: Taiwan
  11. Module Serial Number: 00000000h
  12. Module PCB Revision: 00h
  13.  
  14.  
  15. Physical & Logical Attributes
  16.  
  17. Fundamental Memory Class: DDR4 SDRAM
  18. Module Speed Grade: DDR4-2133P downbin
  19. Base Module Type: UDIMM (133,35 mm)
  20. Module Capacity: 16384 MB
  21. Reference Raw Card: B0 (8 layers)
  22. Initial Raw Card Designer: Micron Technology
  23. Module Nominal Height: 31 < H <= 32 mm
  24. Module Thickness Maximum, Front: 1 < T <= 2 mm
  25. Module Thickness Maximum, Back: 1 < T <= 2 mm
  26. Number of DIMM Ranks: 2
  27. Address Mapping from Edge Connector to DRAM: Mirrored
  28. DRAM Device Package: Standard Monolithic
  29. DRAM Device Package Type: 78-ball FBGA
  30. DRAM Device Die Count: Single die
  31. Signal Loading: Not specified
  32. Number of Column Addresses: 10 bits
  33. Number of Row Addresses: 16 bits
  34. Number of Bank Addresses: 2 bits (4 banks)
  35. Bank Group Addressing: 2 bits (4 groups)
  36. DRAM Device Width: 8 bits
  37. Programmed DRAM Density: 8 Gb
  38. Calculated DRAM Density: 8 Gb
  39. Number of DRAM components: 16
  40. DRAM Page Size: 1 KB
  41. Primary Memory Bus Width: 64 bits
  42. Memory Bus Width Extension: 0 bits
  43. DRAM Post Package Repair: Not supported
  44. Soft Post Package Repair: Not supported
  45.  
  46.  
  47. DRAM Timing Parameters
  48.  
  49. Fine Timebase: 0,001 ns
  50. Medium Timebase: 0,125 ns
  51. CAS Latencies Supported: 9T, 10T, 11T, 12T,
  52. 13T, 14T, 15T, 16T
  53. DRAM Minimum Cycle Time: 0,938 ns
  54. DRAM Maximum Cycle Time: 1,500 ns
  55. Nominal DRAM Clock Frequency: 1066,10 MHz
  56. Minimum DRAM Clock Frequency: 666,67 MHz
  57. CAS# Latency Time (tAA min): 13,500 ns
  58. RAS# to CAS# Delay Time (tRCD min): 13,500 ns
  59. Row Precharge Delay Time (tRP min): 13,500 ns
  60. Active to Precharge Delay Time (tRAS min): 33,000 ns
  61. Act to Act/Refresh Delay Time (tRC min): 46,500 ns
  62. Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns
  63. 2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns
  64. 4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns
  65. Short Row Active to Row Active Delay (tRRD_S min): 3,701 ns
  66. Long Row Active to Row Active Delay (tRRD_L min): 5,300 ns
  67. Long CAS to CAS Delay Time (tCCD_L min): 5,356 ns
  68. Four Active Windows Delay (tFAW min): 23,000 ns
  69. Maximum Active Window (tMAW): 8192*tREFI
  70. Maximum Activate Count (MAC): Unlimited MAC
  71. DRAM VDD 1,20 V operable/endurant: Yes/Yes
  72.  
  73.  
  74. Thermal Parameters
  75.  
  76. Module Thermal Sensor: Not Incorporated
  77.  
  78.  
  79. SPD Protocol
  80.  
  81. SPD Revision: 1.0
  82. SPD Bytes Total: 512
  83. SPD Bytes Used: 384
  84. SPD Checksum (Bytes 00h-7Dh): 547Dh (OK)
  85. SPD Checksum (Bytes 80h-FDh): 27DEh (OK)
  86.  
  87.  
  88. Part number details
  89.  
  90. JEDEC DIMM Label: 16GB 2Rx8 PC4-2133P-UB0-10
  91.  
  92. Frequency CAS RCD RP RAS RC RRDS RRDL CCDL FAW
  93. 1067 MHz 16 15 15 36 50 4 6 6 25
  94. 1067 MHz 15 15 15 36 50 4 6 6 25
  95. 933 MHz 14 13 13 31 44 4 5 5 22
  96. 933 MHz 13 13 13 31 44 4 5 5 22
  97. 800 MHz 12 11 11 27 38 3 5 5 19
  98. 800 MHz 11 11 11 27 38 3 5 5 19
  99. 667 MHz 10 9 9 22 31 3 4 4 16
  100. 667 MHz 9 9 9 22 31 3 4 4 16
  101.  
  102.  
  103. Intel Extreme Memory Profiles
  104.  
  105. Profiles Revision: 2.0
  106. Profile 1 (Certified) Enables: Yes
  107. Profile 2 (Extreme) Enables: No
  108. Profile 1 Channel Config: 1 DIMM/channel
  109.  
  110. XMP Parameter
  111.  
  112. Profile 1 Profile 2
  113. Speed Grade: DDR4-2998 N/A
  114. DRAM Clock Frequency: 1499 MHz N/A
  115. Module VDD Voltage Level: 1,35 V N/A
  116. Minimum DRAM Cycle Time (tCK): 0,667 ns N/A
  117. CAS Latencies Supported: 20T,19T,18T,17T,16T,15T,14T,13T,12T,11T,10T,9T N/A
  118. CAS Latency Time (tAA): 15T N/A
  119. RAS# to CAS# Delay Time (tRCD): 17T N/A
  120. Row Precharge Delay Time (tRP): 17T N/A
  121. Active to Precharge Delay Time (tRAS): 35T N/A
  122. Active to Active/Refresh Delay Time (tRC): 52T N/A
  123. Four Activate Window Delay Time (tFAW): 33T N/A
  124. Short Activate to Activate Delay Time (tRRD_S): 6T N/A
  125. Long Activate to Activate Delay Time (tRRD_L): 8T N/A
  126. Normal Refresh Recovery Delay Time (tRFC1): 525T N/A
  127. 2x mode Refresh Recovery Delay Time (tRFC2): 390T N/A
  128. 4x mode Refresh Recovery Delay Time (tRFC4): 240T N/A
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