%impedancyjna
U = 1.081;
C1= 10*10^(-9);
C2= 47*10^(-9);
RW = 50;
RS = 100;
R = 2200; %symbolizuje rezystory r11 i r12 maja one taka sama wartosc
f = [7000, 13000, 19000];
format long;

%Obliczamy wartości teoretyczne na podstawie schamatu obwodu
f = [7000, 13000, 19000];
format long;
Xc1 = 1./(j*2*C1*pi.*f),
Xc2 = 1./(j*2*C2*pi.*f),
z11t=Xc1+R,
z12t=-R,
z21t=-R,
z22t=Xc2+R,
% na podstawie wartości zmierzonych w labpratorium wyznaczamy macierz
% admitancyjna

%Z11 = U1/I1 | dla i2 = 0
Z11u1 = [1.043,1.024,1.015];
Z11u1fi = [-1.9,-1.7,-1.4];
Z11u1fi=Z11u1fi.*(pi/180);
for n=1:3
complexZ11u1(n)=Z11u1(n)*(cos(Z11u1fi(n))+j*sin(Z11u1fi(n)));
end;

UrZ11 = U - complexZ11u1;
I1Z11=UrZ11./(RS+RW);
Z11 = complexZ11u1./I1Z11,

%Z12 = U1/I2 | dla i1 = 0
Z12u1=[0.962,0.979,0.982];
Z12u1fi=[-0.9,-0.6,-0.5];
Z12u1fi=Z12u1fi.*(pi/180);
Z12uR2=[1.011,1.008,1.007];
Z12uR2fi=[-0.9,-0.6,-0.5];
Z12uR2fi=Z12uR2fi.*(pi/180);

for n=1:3
complexZ12u1(n)=Z12u1(n)*(cos(Z12u1fi(n))+j*sin(Z12u1fi(n)));
complexZ12uR2(n)=Z12uR2(n)*(cos(Z12uR2fi(n))+j*sin(Z12uR2fi(n)));
end;
Z12i2 = complexZ12uR2./(RS+RW);
Z12 = complexZ12u1./Z12i2,

%Z21 = U2/i1 | i2 = 0
Z21u2 = [1.081,1.081,1.081];
Z21u2fi = [0,0,0];
Z21u2fi=Z21u2fi.*(pi/180);
Z21uR1=[0.687,0.862,0.921];
Z21uR1fi=[45.7,29,20.8];
Z21uR1fi=Z21uR1fi.*(pi/180);

for n=1:3
complexZ21u2(n)= Z21u2(n)*(cos(Z21u2fi(n))+j*sin(Z21u2fi(n)));
complexZ21uR1(n)= Z21uR1(n)*(cos(Z21uR1fi(n))+j*sin(Z21uR1fi(n)));
end;
Z21i1 = complexZ21uR1./RS;
Z21 = complexZ21u2./Z21i1,

%Z22 = u2/i2 | i1 = 0
Z22u2=[1.011,1.008,1.007];
Z22u2fi=[-0.9,-0.6,-0.5];
Z22u2fi=Z22u2fi.*(pi/180);

for n=1:3
complexZ22u2(n)=Z22u2(n)*(cos(Z22u2fi(n))+j*sin(Z22u2fi(n)));
end;

UrZ22 = U - complexZ22u2;
I2Z22=UrZ22./(RS+RW);
Z22 = complexZ22u2./I2Z22,