* DDR-SDRAM PC-3200 (DDR-400) Samsung, M3 68L6423HUN-CCC, 512 MB

Fabbricante : Samsung
Part Number : M3 68L6423HUN-CCC
Numero Seriale : xxxxxxxxx
Type : DDR-SDRAM PC-3200 (200 MHz) - [DDR-400]
Dimensione : 512 MB (2 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Larghezza : 64-bit
Capacità di Correzione Errore (ECC) : No
Max. Burst Length : 8
Refresh : Reduced (.5x)7.8 ?s, Self Refresh?s
Voltage : SSTL 2.5vv
Prefetch Buffer : 2-bit
Costruttore : Settimana 19 di 2007
Frequenze supportate : 166 MHz, 200 MHz
CAS Latency (tCL) : 2.5 clocks @ 166 MHz, 3 clocks @ 200 MHz
RAS to CAS (tRCD) : 3 clocks @ 166 MHz, 3 clocks @ 200 MHz
RAS Precharge (tRP) : 3 clocks @ 166 MHz, 3 clocks @ 200 MHz
Cycle Time (tRAS) : 7 clocks @ 166 MHz, 8 clocks @ 200 MHz


* DDR-SDRAM PC-3200 (DDR-400) Infineon, 256 MB

Fabbricante : Non specificato
Part Number : Non specificato
Numero Seriale : Non specificato
Type : DDR-SDRAM PC-3200 (200 MHz) - [DDR-400]
Dimensione : 256 MB (1 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Larghezza : 64-bit
Capacità di Correzione Errore (ECC) : No
Max. Burst Length : 8
Refresh : Reduced (.5x)7.8 ?s, Self Refresh?s
Voltage : SSTL 2.5vv
Prefetch Buffer : 2-bit
Costruttore : 2000
Frequenze supportate : 133 MHz, 166 MHz, 200 MHz
CAS Latency (tCL) : 2 clocks @ 133 MHz, 2.5 clocks @ 166 MHz, 3 clocks @ 200 MHz
RAS to CAS (tRCD) : 2 clocks @ 133 MHz, 3 clocks @ 166 MHz, 3 clocks @ 200 MHz
RAS Precharge (tRP) : 2 clocks @ 133 MHz, 3 clocks @ 166 MHz, 3 clocks @ 200 MHz
Cycle Time (tRAS) : 6 clocks @ 133 MHz, 7 clocks @ 166 MHz, 8 clocks @ 200 MHz