# *************************************************************************** #
#                                                                             #
#                          --- <<< RESISTOR >>> ---                           #
#                                                                             #
# *************************************************************************** #

# ///////////////////////////// PROCESS HEADER \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\

# ----- Initial Grid. -----------------

line x loc= 0.0 tag=Top    spacing=@GridStp@
line x loc= 1.0 tag=Bottom spacing=@GridStp@
line y loc= 0.0 tag=Left   spacing=@GridStp@
line y loc= 3.0 tag=Right  spacing=@GridStp@

# ----- Substrate. -------------------- \\

region Silicon xlo=Top xhi=Bottom ylo=Left yhi=Right

init field=@Dopant@ resistivity=@Resistivity@ \
        wafer.orient=100 slice.angle=-90

# /////////////////////////////// END HEADER \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\

# ///////////////////////////////// PROCESS \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\

#   1) ----- Aluminum Deposition. ---------------------------------------------

mask name=Al segments= { 1 2 }
deposit Aluminum thickness=0.1 mask=Al anisotropic

# ----- Defining Contacts. ------------

contact box xlo=-0.2 xhi=0.0 ylo=0.0 yhi=1.0 \
            name=Anode   Aluminum
contact box xlo=-0.2 xhi=0.0 ylo=2.0 yhi=3.0 \
name=Cathode Aluminum


# ----- Saving Structure. -------------

diffuse temperature=1000 time=0
struct smesh=n@node@

# ----- RS Measuring. -----------------

SheetResistance y=2.5

# \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ THE END ///////////////////////////////////

exit