rtbuhler

finfet-rec

Mar 29th, 2017
74
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  1. # Simulacao dispositivo SOI MOSFET - Triple Gate
  2.  
  3. go devedit simflags="-3d"
  4. DevEdit version=2.6.17.R
  5.  
  6. work.area x1=-0.5 y1=-0.5 x2=0.5 y2=0.5
  7.  
  8. region reg=1 name=gate mat=Polysilicon elec.id=1 work.func=0 color=0xffff00 pattern=0x5 z1=-0.1 z2=0.1 polygon="0.04,-0.07 0.04,0 0.028,0 0.025,0 -0.025,0 -0.028,0 -0.04,0 -0.04,-0.07"
  9.  
  10. constr.mesh region=1 default
  11. region reg=2 name=oxidechannel mat=SiO~2 color=0xff pattern=0x2 z1=-0.12 z2=0.12 polygon="0.028,-0.053 0.028,0 -0.028,0 -0.028,-0.053"
  12.  
  13. constr.mesh region=2 default
  14. region reg=3 name=channel mat=Silicon color=0xffcc00 pattern=0x4 z1=-0.14 z2=0.14 polygon="0.025,-0.05 0.025,0 -0.025,0 -0.025,-0.05"
  15.  
  16. constr.mesh region=3 default max.angle=90 max.ratio=4 max.height=0.002 max.width=0.002 min.height=0.0005 min.width=0.0005
  17. region reg=4 name=box mat=SiO~2 color=0xff pattern=0x2 z1=-0.16 z2=0.16 polygon="-0.07,0 -0.02,0 -0.028,0 -0.025,0 0.025,0 0.028,0 0.02,0 0.07,0 0.07,0.2 -0.07,0.2"
  18.  
  19. constr.mesh region=4 default
  20. region reg=5 name=drain mat=Silicon elec.id=2 work.func=0 color=0xffc8c8 pattern=0x7 z1=-0.16 z2=-0.14 polygon="0.025,-0.05 0.025,0 -0.025,0 -0.025,-0.05"
  21.  
  22. constr.mesh region=5 default
  23. region reg=6 name=source mat=Silicon elec.id=3 work.func=0 color=0xffc8c8 pattern=0x7 z1=0.14 z2=0.16 polygon="0.025,-0.05 0.025,0 -0.025,0 -0.025,-0.05"
  24.  
  25. constr.mesh region=6 default
  26.  
  27. # Set Meshing Parameters
  28.  
  29. base.mesh height=1 width=1
  30. bound.cond !apply max.slope=40 max.ratio=3 rnd.unit=0.0001
  31. imp.refine min.spacing=0.02 z=0
  32. constr.mesh max.angle=90 max.ratio=300 max.height=10000 max.width=10000 min.height=0.0001 min.width=0.0001
  33. constr.mesh type=Semiconductor default
  34. constr.mesh type=Insulator default
  35. constr.mesh type=Metal default
  36. constr.mesh type=Other default
  37. constr.mesh region=1 default
  38. constr.mesh region=2 default
  39. constr.mesh x1=-0.07 y1=0 x2=0.07 y2=0.010 max.height=0.002
  40. constr.mesh region=5 default
  41. constr.mesh region=6 default
  42. Mesh Mode=MeshBuild
  43. z.plane max.spacing=0 max.ratio=1.5
  44. base.mesh height=1 width=1
  45. bound.cond !apply max.slope=40 max.ratio=3 rnd.unit=0.0001
  46. z.plane z=-0.16 spacing=0.01
  47. z.plane z=0.16 spacing=0.01
  48. z.plane max.spacing=1000000 max.ratio=1.5
  49.  
  50. #####################################################
  51. go atlas
  52. electrode name=bulk bottom
  53.  
  54. # define the doping concentrations
  55. doping region=3 p.type uniform conc=1e16
  56. doping region=3 n.type uniform conc=1e21 z.min=-0.14 z.max=-0.1
  57. doping region=3 n.type uniform conc=1e21 z.min=0.1 z.max=0.14
  58. doping region=5 n.type uniform conc=1e21
  59. doping region=6 n.type uniform conc=1e21
  60. interface qf=3e10 region=2
  61. save outf=lixo1.str
  62.  
  63. #********************** select models **********************
  64. models srh auger bgn fldmob consrh fnord bbt.kl kla shi
  65. method gummel newton trap maxtrap=10
  66. solve vdrain=0.05
  67. solve vgate=1
  68. save outf=FinFET_Trap.str
  69. quit
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