(if (string=? "@Type@" "nMOS")
 (begin
  (define DopSub "BoronActiveConcentration")
  (define DopSD  "ArsenicActiveConcentration")
;   - Substrate doping level
  (define SubDop  1e19 )   ; [1/cm3]  ; original : (define SubDop  1e17
  (define HaloDop 1.5e18 ) ; [1/cm3]  ; original : (define HaloDop 1.5e18 )
  (define ExtDop 1e19) ; [1/cm3]      ; original : (define ExtDop 1e19)   ; 18
 )

; (begin
;  (define DopSub "ArsenicActiveConcentration")
; (define DopSD  "BoronActiveConcentration")
;;   - Substrate doping level
;  (define SubDop  5e17 )   ; [1/cm3]
;  (define HaloDop 1.0e18 ) ; [1/cm3]
; )
)
;----------------------------------------------------------------------
; Setting parameters
; - lateral
(define Lg    @lgate@)               ; [um] Gate length
(define Lsp   0.1)                   ; [um] Spacer length
(define Lreox 0.007)                 ; [um] Reox Spacer length
(define Ltot (+ Lg (* 2 Lsp) 0.8) )  ; [um] Lateral extend total

; - layers
(define Hsub 1.0)   ; [um] Substrate thickness
(define Tox  14e-4) ; [um] Gate oxide thickness
(define Hpol 0.2)   ; [um] Poly gate thickness

; - other
;   - spacer rounding
(define fillet-radius 0.08) ; [um] Rounding radius

;   - pn junction resolution
(define Gpn 0.002) ; [um]

(define XjHalo 0.07)  ; [um] Halo Depth            ;; orginal = 0.07
(define XjExt  0.036) ; [um] Extension depth       ;; original = 0.026
(define XjSD   0.12)  ; [um] SD Junction depth

;----------------------------------------------------------------------
; Derived quantities
(define Xmax (/ Ltot 2.0))
(define Xg   (/ Lg   2.0))
(define Xsp  (+ Xg   Lsp))
(define Xrox (+ Xg   Lreox))

(define Ysub Hsub)
(define Ygox (* Tox -1.0))
(define Ypol (- Ygox Hpol))

(define Lcont (- Xmax Xsp))
;----------------------------------------------------------------------
; Overlap resolution: New replaces Old
(sdegeo:set-default-boolean "ABA")

;----------------------------------------------------------------------
; Creating substrate region
(sdegeo:create-rectangle
  (position    0.0  Ysub  0.0 )
  (position    Xmax 0.0 0.0 ) "Silicon" "R.Substrate" )

; Creating gate oxide
(sdegeo:create-rectangle
  (position    0.0 0.0  0.0 )
  (position    Xsp Ygox 0.0 )
  "SiO2" "R.Gateox"
)

; Creating PolyReox
(sdegeo:create-rectangle
  (position    0.0  Ygox 0.0 )
  (position    Xsp  Ypol 0.0 )
  "Oxide" "R.PolyReox"
)

; Creating spacers regions
(sdegeo:create-rectangle
  (position   (+ Xg Lreox)  Ygox 0.0 )
  (position    Xsp  Ypol 0.0 )
  "Si3N4" "R.Spacer"
)

; Creating PolySi gate
(sdegeo:create-rectangle
  (position    0.0 Ygox 0.0 )
  (position    Xg  Ypol 0.0 )
  "PolySi" "R.Polygate"
)

;----------------------------------------------------------------------
; - rounding spacer
(sdegeo:fillet-2d
 (find-vertex-id (position Xsp Ypol 0.0 ))
 fillet-radius)

;----------------------------------------------------------------------
; Contact declarations
(sdegeo:define-contact-set "drain"
  4.0  (color:rgb 0.0 1.0 0.0 ) "##")

(sdegeo:define-contact-set "gate"
  4.0  (color:rgb 0.0 0.0 1.0 ) "##")

(sdegeo:define-contact-set "substrate"
  4.0  (color:rgb 0.0 1.0 1.0 ) "##")

;----------------------------------------------------------------------
; Contact settings
(sdegeo:define-2d-contact
 (find-edge-id (position (* (+ Xmax Xsp)  0.5) 0.0 0.0))
 "drain")

(sdegeo:define-2d-contact
 (find-edge-id (position 5e-4 Ypol 0.0))
 "gate")

(sdegeo:define-2d-contact
 (find-edge-id (position 5e-4  Ysub 0.0))
 "substrate")

;----------------------------------------------------------------------
; Separating lumps
(sde:separate-lumps)

; Setting region names
(sde:addmaterial
  (find-body-id (position  5e-4  (- Ysub 0.1) 0.0))
  "Silicon" "R.Substrate")

(sde:addmaterial
  (find-body-id (position  5e-4  (* 0.5 Ygox) 0.0))
  "SiO2"    "R.Gateox")

(sde:addmaterial
  (find-body-id (position  5e-4  (- Ygox 0.01)  0.0))
  "PolySi"  "R.Polygate")

(sde:addmaterial
  (find-body-id (position (* -0.5 (+ Xsp Xg)) (- Ygox 0.01)  0.0))
  "Si3N4"   "R.Spacerleft")

(sde:addmaterial
  (find-body-id (position (*  0.5 (+ Xsp Xg)) (- Ygox 0.01)  0.0))
"Si3N4"   "R.Spacerright")

; Profiles:
; - Substrate
(sdedr:define-constant-profile "Const.Substrate"
 DopSub SubDop )
(sdedr:define-constant-profile-region  "PlaceCD.Substrate"
 "Const.Substrate" "R.Substrate" )

; - Poly
(sdedr:define-constant-profile "Const.Gate"
 DopSD 1e20 )
(sdedr:define-constant-profile-region "PlaceCD.Gate"
 "Const.Gate" "R.Polygate" )

; - Halo
; -- base line definitions
(sdedr:define-refinement-window "BaseLine.Halo" "Line"
 (position    Xg        0.0 0.0)
 (position (* Xmax 2.0) 0.0 0.0) )

; -- implant definition
(sdedr:define-gaussian-profile "Impl.Haloprof"
 DopSub
 "PeakPos" 0  "PeakVal" HaloDop
 "ValueAtDepth" (* 0.87 HaloDop)  "Depth" XjHalo       ;; original: "ValueAtDepth" (* 0.1 HaloDop)  "Depth" XjHalo
 "Gauss"  "Factor" 1.0
)
; -- implant placement
(sdedr:define-analytical-profile-placement "Impl.Halo"
 "Impl.Haloprof" "BaseLine.Halo" "Positive" "NoReplace" "Eval")

; - Source/Drain extensions
; -- base line definitions
(sdedr:define-refinement-window "BaseLine.Ext" "Line"
 (position    Xrox      0.0 0.0)
 (position (* Xmax 2.0) 0.0 0.0) )


;   implant definition
(sdedr:define-gaussian-profile "Impl.Extprof"
 DopSD
 "PeakPos" 0  "PeakVal" ExtDop
 "ValueAtDepth" SubDop "Depth" XjExt
 "Gauss"  "Factor" 0.8
)


; -- implant placement
(sdedr:define-analytical-profile-placement "Impl.Ext"
 "Impl.Extprof" "BaseLine.Ext" "Positive" "NoReplace" "Eval")

; - Source/Drain implants
; -- base line definitions
(sdedr:define-refinement-window "BaseLine.SD" "Line"
 (position Xsp 0.0 0.0)
 (position (* Xmax 2.0) 0.0 0.0) )

; -- implant definition
(sdedr:define-gaussian-profile "Impl.SDprof"
 DopSD
 "PeakPos" 0  "PeakVal" 1e20
 "ValueAtDepth" SubDop "Depth" XjSD
 "Gauss"  "Factor" 0.8
)

; -- implant placement
(sdedr:define-analytical-profile-placement "Impl.SD"
 "Impl.SDprof" "BaseLine.SD" "Positive" "NoReplace" "Eval")

;----------------------------------------------------------------------
; Meshing Strategy:
; Substrate
(sdedr:define-refinement-size "Ref.Substrate"
  (/ Xmax 4.0)  (/ Hsub 8.0)
  Gpn            Gpn )
(sdedr:define-refinement-function "Ref.Substrate"
 "DopingConcentration" "MaxTransDiff" 1)
(sdedr:define-refinement-region "RefPlace.Substrate"
 "Ref.Substrate" "R.Substrate" )


; Active
(sdedr:define-refinement-window "RWin.Act"
 "Rectangle"
 (position   0.0  0.0   0.0)
 (position  Xmax (* XjSD  1.5)    0.0) )
(sdedr:define-refinement-size "Ref.SiAct"
  (/ Lcont 4.0) (/ XjSD 6.0)
  Gpn            Gpn )
(sdedr:define-refinement-function "Ref.SiAct"
 "DopingConcentration" "MaxTransDiff" 1)
(sdedr:define-refinement-placement "RefPlace.SiAct"
 "Ref.SiAct" "RWin.Act" )


; Po Gate Multibox
(sdedr:define-refinement-window "MBWindow.Gate"
 "Rectangle"
 (position 0.0 Ypol  0.0)
 (position Xg  Ygox  0.0) )
(sdedr:define-multibox-size "MBSize.Gate"
  (/ Lg  8.0)  (/ Hpol 4.0)
  (/ Lg 10.0)   2e-4
  1.0         -1.35 )
(sdedr:define-multibox-placement "MBPlace.Gate"
 "MBSize.Gate"  "MBWindow.Gate" )


; GateOx Multibox
(sdedr:define-refinement-window "MBWindow.GateOx"
 "Rectangle"
 (position 0.0        Ygox  0.0)
 (position (* Xg  1.2) 0.0  0.0) )
(sdedr:define-multibox-size "MBSize.GateOx"
  (/ Lg  8.0)  (/ Tox 4.0)
  (/ Lg 10.0)   1e-4
  1.0         -1.35 )
(sdedr:define-multibox-placement "MBPlace.GateOx"
 "MBSize.GateOx"  "MBWindow.GateOx" )


; GateOx
(sdedr:define-refinement-size "Ref.GOX"
  (/ Ltot 4.0)  (/ Tox 4.0)
  Gpn           (/ Tox 8.0) )
(sdedr:define-refinement-region "RefPlace.GOX"
 "Ref.GOX" "R.Gateox" )


; Channel Multibox
(sdedr:define-refinement-window "MBWindow.Channel"
 "Rectangle"
 (position        0.0  0.0   0.0)
 (position (* Xg  1.2) (* 2.0 XjExt)  0.0) )
(sdedr:define-multibox-size "MBSize.Channel"
  (/ Lg  8.0)  (/ XjSD 8.0)
  (/ Lg 10.0)   1e-4
  1.0           1.35 )
(sdedr:define-multibox-placement "MBPlace.Channel"
 "MBSize.Channel" "MBWindow.Channel" )


; Junctions under the gate
(sdedr:define-refinement-size "Ref.J"
  (/ XjExt 8.0)  (/ XjExt 8.0)
  (/ XjExt 10.0) (/ XjExt 10.0))

; Gate-Drain Junction
(sdedr:define-refinement-window "RWin.GD"
 "Rectangle"
 (position (- Xrox (* 0.8 XjExt))   0.0   0.0)
 (position (- Xrox (* 0.1 XjExt))   (* XjExt 0.5)  0.0) )
(sdedr:define-refinement-placement "RefPlace.GJ"
 "Ref.J" "RWin.GD" )

;----------------------------------------------------------------------
; Build Mesh
(sde:build-mesh "snmesh" " " "n@node@_half_msh")

;----------------------------------------------------------------------
; Reflect device

(system:command "tdx -mtt -x -ren drain=source n@node@_half_msh n@node@_msh")